BLF6G10L-260PRN Datasheet and Replacement

BLF6G10L-260PRN; BLF6G10LS-260PRNPower LDMOS transistorRev. 1 12 August 2010 Product data sheet1. Product profile1.1 General description260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV)

BLF6G10L-40BRNPower LDMOS transistorRev. 3 16 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V)

BLF6G10-160RN; BLF6G10LS-160RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLF6G10-135RN; BLF6G10LS-135RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLF6G10-200RN; BLF6G10LS-200RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G