BLF6G20LS-180RN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF6G20LS-180RN
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SOT502B

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BLF6G20LS-180RN Datasheet (PDF)

3.1. Size:82K nxp
blf6g20-110 blf6g20ls-110.pdf

BLF6G20-110; BLF6G20LS-110Power LDMOS transistorRev. 03 13 January 2009 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) G

3.2. Size:67K nxp
blf6g20ls-140.pdf

BLF6G20LS-140Power LDMOS transistorRev. 01 27 February 2009 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A

4.1. Size:93K philips
blf6g20-75 blf6g20ls-75.pdf

BLF6G20-75; BLF6G20LS-75Power LDMOS transistorRev. 02 9 February 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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