BLF6G20LS-180RN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF6G20LS-180RN
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SOT502B
BLF6G20LS-180RN Datasheet (PDF)
blf6g20-110 blf6g20ls-110.pdf

BLF6G20-110; BLF6G20LS-110Power LDMOS transistorRev. 03 13 January 2009 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) G
blf6g20ls-140.pdf

BLF6G20LS-140Power LDMOS transistorRev. 01 27 February 2009 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A
blf6g20-75 blf6g20ls-75.pdf

BLF6G20-75; BLF6G20LS-75Power LDMOS transistorRev. 02 9 February 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp
Otros transistores... BLF6G20-180PN , BLF6G20-180RN , BLF6G20-230PRN , BLF6G20-40 , BLF6G20-45 , BLF6G20-75 , BLF6G20LS-110 , BLF6G20LS-140 , IRF640N , BLF6G20LS-75 , BLF6G20S-230PRN , BLF6G20S-45 , BLF6G21-10G , BLF6G22-180PN , BLF6G22-180RN , BLF6G22-45 , BLF6G22L-40BN .



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