BLF6G20LS-180RN Datasheet: LDMOS, N-Ch, 30V, 25A. Full specification with pinout and replacement list

BLF6G20LS-180RN Datasheet. Specs and Replacement

Type Designator: BLF6G20LS-180RN 📄📄

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT502B

📄📄 Copy

BLF6G20LS-180RN substitution

- MOSFET ⓘ Cross-Reference Search

BLF6G20LS-180RN datasheet

3.1. Size:82K nxp
blf6g20-110 blf6g20ls-110.pdf pdf_icon

BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) G... See More ⇒

3.2. Size:67K nxp
blf6g20ls-140.pdf pdf_icon

BLF6G20LS-140 Power LDMOS transistor Rev. 01 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A... See More ⇒

4.1. Size:93K philips
blf6g20-75 blf6g20ls-75.pdf pdf_icon