BLF6G20LS-180RN Datasheet and Replacement
Type Designator: BLF6G20LS-180RN
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT502B
BLF6G20LS-180RN substitution
BLF6G20LS-180RN Datasheet (PDF)
blf6g20-110 blf6g20ls-110.pdf
BLF6G20-110; BLF6G20LS-110Power LDMOS transistorRev. 03 13 January 2009 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) G
blf6g20ls-140.pdf
BLF6G20LS-140Power LDMOS transistorRev. 01 27 February 2009 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A
blf6g20-75 blf6g20ls-75.pdf
BLF6G20-75; BLF6G20LS-75Power LDMOS transistorRev. 02 9 February 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp
Datasheet: BLF6G20-180PN , BLF6G20-180RN , BLF6G20-230PRN , BLF6G20-40 , BLF6G20-45 , BLF6G20-75 , BLF6G20LS-110 , BLF6G20LS-140 , IRFB4110 , BLF6G20LS-75 , BLF6G20S-230PRN , BLF6G20S-45 , BLF6G21-10G , BLF6G22-180PN , BLF6G22-180RN , BLF6G22-45 , BLF6G22L-40BN .
Keywords - BLF6G20LS-180RN MOSFET datasheet
BLF6G20LS-180RN cross reference
BLF6G20LS-180RN equivalent finder
BLF6G20LS-180RN lookup
BLF6G20LS-180RN substitution
BLF6G20LS-180RN replacement
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