BLF6G21-10G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF6G21-10G
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 10 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V
|Id|ⓘ - Corriente continua
de drenaje: 3.1 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: SOT538A
Búsqueda de reemplazo de BLF6G21-10G MOSFET
- Selecciónⓘ de transistores por parámetros
BLF6G21-10G datasheet
..1. Size:82K philips
blf6g21-10g.pdf 
BLF6G21-10G Power LDMOS transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase =25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (
8.1. Size:277K philips
blf6g27-75 6g27ls-75.pdf
BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D
8.3. Size:299K philips
blf6g27-100 blf6g27ls-100.pdf
BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D
8.4. Size:81K philips
blf6g20-45 blf6g20s-45.pdf
BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D
8.5. Size:218K philips
blf6g27l-50bn blf6g27ls-50bn.pdf
BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(
8.6. Size:150K philips
blf6g22-180pn blf6g22ls-180pn.pdf
BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A
8.7. Size:137K philips
blf6g20-230prn blf6g20s-230prn.pdf
BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS
8.8. Size:76K philips
blf6g20-40.pdf
BLF6G20-40 Power LDMOS transistor Rev. 01 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)
8.9. Size:84K philips
blf6g20-180pn.pdf
BLF6G20-180PN Power LDMOS transistor Rev. 03 30 March 2009 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH
8.10. Size:98K philips
blf6g22-180rn blf22ls-180rn.pdf
BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G
8.11. Size:124K philips
blf6g27-45 blf6g27s-45.pdf
BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 15 December 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR8
8.12. Size:103K philips
blf6g20-180rn blf20ls-180rn.pdf
BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G
8.13. Size:71K philips
blf6g22-45.pdf
BLF6G22-45 Power LDMOS transistor Rev. 02 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (
8.14. Size:92K philips
blf6g27-135 blf6g27ls-135.pdf
BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)
8.15. Size:68K philips
blf6g22s-45.pdf
BLF6G22S-45 Power LDMOS transistor Rev. 02 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)
8.16. Size:82K nxp
blf6g20-110 blf6g20ls-110.pdf
BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) G
8.17. Size:67K nxp
blf6g20ls-140.pdf
BLF6G20LS-140 Power LDMOS transistor Rev. 01 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A
8.18. Size:176K nxp
blf6g22l-40p 6g22ls-40p.pdf
BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
8.19. Size:80K nxp
blf6g22ls-130.pdf
BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR
8.20. Size:135K nxp
blf6g22ls-75.pdf
BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR
8.21. Size:306K nxp
blf6g22l-40bn.pdf
BLF6G22L-40BN Power LDMOS transistor Rev. 1 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH
8.22. Size:251K nxp
blf6g27l-40p 27ls-40p 27ls-40pg.pdf
BLF6G27L-40P; BLF6G27LS-40P(G) Power LDMOS transistor Rev. 3 14 January 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source
8.23. Size:276K nxp
blf6g27-10 blf6g27-10g.pdf
BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation
8.24. Size:276K nxp
blf6g22ls-100.pdf
BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A
Otros transistores... BLF6G20-45, BLF6G20-75, BLF6G20LS-110, BLF6G20LS-140, BLF6G20LS-180RN, BLF6G20LS-75, BLF6G20S-230PRN, BLF6G20S-45, IRFB4227, BLF6G22-180PN, BLF6G22-180RN, BLF6G22-45, BLF6G22L-40BN, BLF6G22L-40P, BLF6G22LS-100, BLF6G22LS-130, BLF6G22LS-180PN
