BLF6G21-10G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLF6G21-10GPower LDMOS transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHzTable 1. Typical performanceIDq = 100 mA; Tcase =25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz) (V) (W) (

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

BLF6G20-75; BLF6G20LS-75Power LDMOS transistorRev. 02 9 February 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

BLF6G20-45; BLF6G20S-45Power LDMOS transistorRev. 02 25 August 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(

BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A

BLF6G20-230PRN; BLF6G20S-230PRNPower LDMOS transistorRev. 02 9 February 2010 Product data sheet1. Product profile1.1 General description230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS

BLF6G20-40Power LDMOS transistorRev. 01 19 January 2009 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz)

BLF6G20-180PNPower LDMOS transistorRev. 03 30 March 2009 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH

BLF6G22-180RN;BLF6G22LS-180RNPower LDMOS transistorRev. 01 20 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLF6G27-45; BLF6G27S-45WiMAX power LDMOS transistorRev. 03 15 December 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR8

BLF6G20-180RN;BLF6G20LS-180RNPower LDMOS transistorRev. 01 17 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLF6G22-45Power LDMOS transistorRev. 02 21 April 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz) (

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)

BLF6G22S-45Power LDMOS transistorRev. 02 17 April 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz)

BLF6G20-110; BLF6G20LS-110Power LDMOS transistorRev. 03 13 January 2009 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLF6G20LS-140Power LDMOS transistorRev. 01 27 February 2009 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A

BLF6G22L-40P; BLF6G22LS-40PPower LDMOS transistorRev. 1 22 September 2011 Product data sheet1. Product profile1.1 General descriptionLDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22LS-75Power LDMOS transistorRev. 02 14 April 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22L-40BNPower LDMOS transistorRev. 1 30 August 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH

BLF6G27L-40P; BLF6G27LS-40P(G)Power LDMOS transistorRev. 3 14 January 2015 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source

BLF6G27-10; BLF6G27-10GWiMAX power LDMOS transistorRev. 4 16 December 2014 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation

BLF6G22LS-100Power LDMOS transistorRev. 3 12 November 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A