BLF6G21-10G - описание и поиск аналогов

BLF6G21-10G Power LDMOS transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase =25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A

BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS

BLF6G20-40 Power LDMOS transistor Rev. 01 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

BLF6G20-180PN Power LDMOS transistor Rev. 03 30 March 2009 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH

BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 15 December 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR8

BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

BLF6G22-45 Power LDMOS transistor Rev. 02 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)

BLF6G22S-45 Power LDMOS transistor Rev. 02 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) G

BLF6G20LS-140 Power LDMOS transistor Rev. 01 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A

BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22L-40BN Power LDMOS transistor Rev. 1 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH

BLF6G27L-40P; BLF6G27LS-40P(G) Power LDMOS transistor Rev. 3 14 January 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A