BLF6G22LS-40P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF6G22LS-40P

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm

Encapsulados: SOT1121B

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BLF6G22LS-40P datasheet

 4.1. Size:150K  philips
 blf6g22-180pn blf6g22ls-180pn.pdf pdf_icon

BLF6G22LS-40P

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A

 4.2. Size:80K  nxp
 blf6g22ls-130.pdf pdf_icon

BLF6G22LS-40P

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

 4.3. Size:135K  nxp
 blf6g22ls-75.pdf pdf_icon

BLF6G22LS-40P

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

 4.4. Size:276K  nxp
 blf6g22ls-100.pdf pdf_icon

BLF6G22LS-40P

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A

MOSTRAR MÁS

Otros transistores... BLF6G22-180RN, BLF6G22-45, BLF6G22L-40BN, BLF6G22L-40P, BLF6G22LS-100, BLF6G22LS-130, BLF6G22LS-180PN, BLF6G22LS-180RN, IRF630, BLF6G22LS-75, BLF6G22S-45, BLF6G27-10, BLF6G27-100, BLF6G27-10G, BLF6G27-135, BLF6G27-45, BLF6G27-75