All MOSFET. BLF6G22LS-40P Datasheet

 

BLF6G22LS-40P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF6G22LS-40P
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: SOT1121B

 BLF6G22LS-40P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF6G22LS-40P Datasheet (PDF)

 4.1. Size:150K  philips
blf6g22-180pn blf6g22ls-180pn.pdf

BLF6G22LS-40P BLF6G22LS-40P

BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A

 4.2. Size:80K  nxp
blf6g22ls-130.pdf

BLF6G22LS-40P BLF6G22LS-40P

BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

 4.3. Size:135K  nxp
blf6g22ls-75.pdf

BLF6G22LS-40P BLF6G22LS-40P

BLF6G22LS-75Power LDMOS transistorRev. 02 14 April 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

 4.4. Size:276K  nxp
blf6g22ls-100.pdf

BLF6G22LS-40P BLF6G22LS-40P

BLF6G22LS-100Power LDMOS transistorRev. 3 12 November 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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