BLF6G27-100 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF6G27-100

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 29 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT502A

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BLF6G27-100 datasheet

 ..1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27-100

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

 4.1. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdf pdf_icon

BLF6G27-100

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation

 5.1. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27-100

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)

 6.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf pdf_icon

BLF6G27-100

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D

Otros transistores... BLF6G22LS-100, BLF6G22LS-130, BLF6G22LS-180PN, BLF6G22LS-180RN, BLF6G22LS-40P, BLF6G22LS-75, BLF6G22S-45, BLF6G27-10, STP75NF75, BLF6G27-10G, BLF6G27-135, BLF6G27-45, BLF6G27-75, BLF6G27L-40P, BLF6G27L-50BN, BLF6G27LS-100, BLF6G27LS-135