Справочник MOSFET. BLF6G27-100

 

BLF6G27-100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF6G27-100
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 29 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT502A

 Аналог (замена) для BLF6G27-100

 

 

BLF6G27-100 Datasheet (PDF)

 ..1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf

BLF6G27-100
BLF6G27-100

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 4.1. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdf

BLF6G27-100
BLF6G27-100

BLF6G27-10; BLF6G27-10GWiMAX power LDMOS transistorRev. 4 16 December 2014 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation

 5.1. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf

BLF6G27-100
BLF6G27-100

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)

 6.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf

BLF6G27-100
BLF6G27-100

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

 6.2. Size:124K  philips
blf6g27-45 blf6g27s-45.pdf

BLF6G27-100
BLF6G27-100

BLF6G27-45; BLF6G27S-45WiMAX power LDMOS transistorRev. 03 15 December 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR8

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