BLF6G27-135 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF6G27-135
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 32 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: SOT502A
Búsqueda de reemplazo de BLF6G27-135 MOSFET
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BLF6G27-135 datasheet
blf6g27-135 blf6g27ls-135.pdf
BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)
blf6g27-100 blf6g27ls-100.pdf
BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D
blf6g27-10 blf6g27-10g.pdf
BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation
blf6g27-75 6g27ls-75.pdf
BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D
Otros transistores... BLF6G22LS-180PN, BLF6G22LS-180RN, BLF6G22LS-40P, BLF6G22LS-75, BLF6G22S-45, BLF6G27-10, BLF6G27-100, BLF6G27-10G, IRF9540N, BLF6G27-45, BLF6G27-75, BLF6G27L-40P, BLF6G27L-50BN, BLF6G27LS-100, BLF6G27LS-135, BLF6G27LS-40P, BLF6G27LS-50BN
History: RFD7N10LE
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