All MOSFET. BLF6G27-135 Datasheet

 

BLF6G27-135 Datasheet and Replacement


   Type Designator: BLF6G27-135
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT502A
 

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BLF6G27-135 Datasheet (PDF)

 ..1. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27-135

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)

 5.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27-135

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 5.2. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdf pdf_icon

BLF6G27-135

BLF6G27-10; BLF6G27-10GWiMAX power LDMOS transistorRev. 4 16 December 2014 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation

 6.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf pdf_icon

BLF6G27-135

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS830A3RD

Keywords - BLF6G27-135 MOSFET datasheet

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