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BLF6G27S-45 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF6G27S-45
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: SOT608B
 

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BLF6G27S-45 Datasheet (PDF)

 ..1. Size:124K  philips
blf6g27-45 blf6g27s-45.pdf pdf_icon

BLF6G27S-45

BLF6G27-45; BLF6G27S-45WiMAX power LDMOS transistorRev. 03 15 December 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR8

 7.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf pdf_icon

BLF6G27S-45

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

 7.2. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27S-45

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 7.3. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdf pdf_icon

BLF6G27S-45

BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(

Otros transistores... BLF6G27-75 , BLF6G27L-40P , BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , BLF6G27LS-40P , BLF6G27LS-50BN , BLF6G27LS-75 , TK10A60D , BLF6G38-10 , BLF6G38-100 , BLF6G38-10G , BLF6G38-25 , BLF6G38-50 , BLF6G38LS-100 , BLF6G38LS-50 , BLF6G38S-25 .

History: BSS84AKW | 2SK3355-ZJ | JCS4N65MF | IXTP15N50L2 | IXTP3N80 | BUK7M12-60E | 2SK3132

 

 
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