Справочник MOSFET. BLF6G27S-45

 

BLF6G27S-45 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF6G27S-45
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: SOT608B
     - подбор MOSFET транзистора по параметрам

 

BLF6G27S-45 Datasheet (PDF)

 ..1. Size:124K  philips
blf6g27-45 blf6g27s-45.pdfpdf_icon

BLF6G27S-45

BLF6G27-45; BLF6G27S-45WiMAX power LDMOS transistorRev. 03 15 December 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR8

 7.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdfpdf_icon

BLF6G27S-45

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

 7.2. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdfpdf_icon

BLF6G27S-45

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 7.3. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdfpdf_icon

BLF6G27S-45

BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK3117 | NTMD6N03R2 | FDMS0309AS

 

 
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