BLF6G27S-45 - описание и поиск аналогов

 

BLF6G27S-45. Аналоги и основные параметры

Наименование производителя: BLF6G27S-45

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 28 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm

Тип корпуса: SOT608B

Аналог (замена) для BLF6G27S-45

- подборⓘ MOSFET транзистора по параметрам

 

BLF6G27S-45 даташит

 ..1. Size:124K  philips
blf6g27-45 blf6g27s-45.pdfpdf_icon

BLF6G27S-45

BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 15 December 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR8

 7.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdfpdf_icon

BLF6G27S-45

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D

 7.2. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdfpdf_icon

BLF6G27S-45

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

 7.3. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdfpdf_icon

BLF6G27S-45

BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(

Другие MOSFET... BLF6G27-75 , BLF6G27L-40P , BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , BLF6G27LS-40P , BLF6G27LS-50BN , BLF6G27LS-75 , 13N50 , BLF6G38-10 , BLF6G38-100 , BLF6G38-10G , BLF6G38-25 , BLF6G38-50 , BLF6G38LS-100 , BLF6G38LS-50 , BLF6G38S-25 .

History: BSS123D87Z | 2SJ325 | BLF6G27LS-40P

 

 

 

 

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