Справочник MOSFET. BLF6G27S-45

 

BLF6G27S-45 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF6G27S-45
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: SOT608B

 Аналог (замена) для BLF6G27S-45

 

 

BLF6G27S-45 Datasheet (PDF)

 ..1. Size:124K  philips
blf6g27-45 blf6g27s-45.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27-45; BLF6G27S-45WiMAX power LDMOS transistorRev. 03 15 December 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR8

 7.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

 7.2. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 7.3. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(

 7.4. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)

 7.5. Size:251K  nxp
blf6g27l-40p 27ls-40p 27ls-40pg.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27L-40P; BLF6G27LS-40P(G)Power LDMOS transistorRev. 3 14 January 2015 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source

 7.6. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdf

BLF6G27S-45
BLF6G27S-45

BLF6G27-10; BLF6G27-10GWiMAX power LDMOS transistorRev. 4 16 December 2014 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation

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