BLF6G38-25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF6G38-25
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 8.2 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
Paquete / Cubierta: SOT608A
Búsqueda de reemplazo de MOSFET BLF6G38-25
BLF6G38-25 Datasheet (PDF)
blf6g38-50 blf6g38ls-50.pdf
BLF6G38-50; BLF6G38LS-50WiMAX power LDMOS transistorRev. 02 1 June 2010 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f (MHz) VDS (V) PL(AV)
blf6g38-10 blf6g38-10g.pdf
BLF6G38-10; BLF6G38-10GWiMAX power LDMOS transistorRev. 2 6 January 2015 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR
blf6g38-100 6g38ls-100.pdf
BLF6G38-100; BLF6G38LS-100WiMAX power LDMOS transistorRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
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