BLF6G38-25
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF6G38-25
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Id|ⓘ - Maximum Drain Current: 8.2
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58
Ohm
Package: SOT608A
BLF6G38-25
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF6G38-25
Datasheet (PDF)
6.1. Size:153K philips
blf6g38-50 blf6g38ls-50.pdf
BLF6G38-50; BLF6G38LS-50WiMAX power LDMOS transistorRev. 02 1 June 2010 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f (MHz) VDS (V) PL(AV)
6.2. Size:345K nxp
blf6g38-10 blf6g38-10g.pdf
BLF6G38-10; BLF6G38-10GWiMAX power LDMOS transistorRev. 2 6 January 2015 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR
6.3. Size:145K nxp
blf6g38-100 6g38ls-100.pdf
BLF6G38-100; BLF6G38LS-100WiMAX power LDMOS transistorRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL
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