BLF6G38S-25 Todos los transistores

 

BLF6G38S-25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF6G38S-25
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
   Paquete / Cubierta: SOT608B

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BLF6G38S-25 Datasheet (PDF)

 7.1. Size:153K  philips
blf6g38-50 blf6g38ls-50.pdf

BLF6G38S-25
BLF6G38S-25

BLF6G38-50; BLF6G38LS-50WiMAX power LDMOS transistorRev. 02 1 June 2010 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f (MHz) VDS (V) PL(AV)

 7.2. Size:345K  nxp
blf6g38-10 blf6g38-10g.pdf

BLF6G38S-25
BLF6G38S-25

BLF6G38-10; BLF6G38-10GWiMAX power LDMOS transistorRev. 2 6 January 2015 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR

 7.3. Size:145K  nxp
blf6g38-100 6g38ls-100.pdf

BLF6G38S-25
BLF6G38S-25

BLF6G38-100; BLF6G38LS-100WiMAX power LDMOS transistorRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL

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