BLF6G38S-25 Datasheet and Replacement
Type Designator: BLF6G38S-25
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: SOT608B
BLF6G38S-25 substitution
BLF6G38S-25 Datasheet (PDF)
blf6g38-50 blf6g38ls-50.pdf
BLF6G38-50; BLF6G38LS-50WiMAX power LDMOS transistorRev. 02 1 June 2010 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f (MHz) VDS (V) PL(AV)
blf6g38-10 blf6g38-10g.pdf
BLF6G38-10; BLF6G38-10GWiMAX power LDMOS transistorRev. 2 6 January 2015 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR
blf6g38-100 6g38ls-100.pdf
BLF6G38-100; BLF6G38LS-100WiMAX power LDMOS transistorRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL
Datasheet: BLF6G27S-45 , BLF6G38-10 , BLF6G38-100 , BLF6G38-10G , BLF6G38-25 , BLF6G38-50 , BLF6G38LS-100 , BLF6G38LS-50 , 5N65 , BLF7G10L-250 , BLF7G10LS-250 , BLF7G15LS-200 , BLF7G15LS-300P , BLF7G20L-200 , BLF7G20L-250P , BLF7G20L-90P , BLF7G20LS-140P .
History: RHU003N03
Keywords - BLF6G38S-25 MOSFET datasheet
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History: RHU003N03
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