BLF7G10LS-250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLF7G10L-250; BLF7G10LS-250Power LDMOS transistorRev. 4 13 September 2012 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.Table 1. Typical performanceTest signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;carrier spacing =

BLF7G15LS-300PPower LDMOS transistorRev. 2 3 December 2010 Product data sheet1. Product profile1.1 General description300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) G

BLF7G15LS-200Power LDMOS transistorRev. 2 1 March 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV)