BLF7G10LS-250 Specs and Replacement
Type Designator: BLF7G10LS-250
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 56 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SOT502B
BLF7G10LS-250 substitution
- MOSFET ⓘ Cross-Reference Search
BLF7G10LS-250 datasheet
blf7g10l-250 7g10ls-250.pdf
BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 4 13 September 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing =... See More ⇒
blf7g15ls-300p.pdf
BLF7G15LS-300P Power LDMOS transistor Rev. 2 3 December 2010 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) G... See More ⇒
blf7g15ls-200.pdf
BLF7G15LS-200 Power LDMOS transistor Rev. 2 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) ... See More ⇒
Detailed specifications: BLF6G38-100, BLF6G38-10G, BLF6G38-25, BLF6G38-50, BLF6G38LS-100, BLF6G38LS-50, BLF6G38S-25, BLF7G10L-250, AON7506, BLF7G15LS-200, BLF7G15LS-300P, BLF7G20L-200, BLF7G20L-250P, BLF7G20L-90P, BLF7G20LS-140P, BLF7G20LS-200, BLF7G20LS-250P
Keywords - BLF7G10LS-250 MOSFET specs
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