BLF7G20L-200 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF7G20L-200
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.093 Ohm
   Paquete / Cubierta: SOT502A

Búsqueda de reemplazo de MOSFET BLF7G20L-200

BLF7G20L-200 Datasheet (PDF)

..1. Size:282K philips
blf7g20l-200 7g20ls-200.pdf

BLF7G20L-200; BLF7G20LS-200Power LDMOS transistorRev. 3 1 March 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

4.1. Size:522K philips
blf7g20l-250p 7g20ls-250p.pdf

BLF7G20L-250P; BLF7G20LS-250PPower LDMOS transistorRev. 3 1 March 2011 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

5.1. Size:100K philips
blf7g20l-160p blf7g20ls-160p.pdf

BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

5.2. Size:210K philips
blf7g20l-90p blf7g20ls-90p.pdf

BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

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