All MOSFET. BLF7G20L-200 Datasheet

 

BLF7G20L-200 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF7G20L-200
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm
   Package: SOT502A

 BLF7G20L-200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF7G20L-200 Datasheet (PDF)

 ..1. Size:282K  philips
blf7g20l-200 7g20ls-200.pdf

BLF7G20L-200
BLF7G20L-200

BLF7G20L-200; BLF7G20LS-200Power LDMOS transistorRev. 3 1 March 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.1. Size:522K  philips
blf7g20l-250p 7g20ls-250p.pdf

BLF7G20L-200
BLF7G20L-200

BLF7G20L-250P; BLF7G20LS-250PPower LDMOS transistorRev. 3 1 March 2011 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

 5.1. Size:100K  philips
blf7g20l-160p blf7g20ls-160p.pdf

BLF7G20L-200
BLF7G20L-200

BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 5.2. Size:210K  philips
blf7g20l-90p blf7g20ls-90p.pdf

BLF7G20L-200
BLF7G20L-200

BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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