BLF7G20L-200 Specs and Replacement
Type Designator: BLF7G20L-200
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 50 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm
Package: SOT502A
BLF7G20L-200 substitution
- MOSFET ⓘ Cross-Reference Search
BLF7G20L-200 datasheet
blf7g20l-200 7g20ls-200.pdf
BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f... See More ⇒
blf7g20l-250p 7g20ls-250p.pdf
BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I... See More ⇒
blf7g20l-160p blf7g20ls-160p.pdf
BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f... See More ⇒
blf7g20l-90p blf7g20ls-90p.pdf
BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq... See More ⇒
Detailed specifications: BLF6G38-50, BLF6G38LS-100, BLF6G38LS-50, BLF6G38S-25, BLF7G10L-250, BLF7G10LS-250, BLF7G15LS-200, BLF7G15LS-300P, TK10A60D, BLF7G20L-250P, BLF7G20L-90P, BLF7G20LS-140P, BLF7G20LS-200, BLF7G20LS-250P, BLF7G20LS-90P, BLF7G21L-160P, BLF7G21LS-160P
Keywords - BLF7G20L-200 MOSFET specs
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