BLF7G24L-100 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF7G24L-100
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V
|Id|ⓘ - Corriente continua
de drenaje: 28 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: SOT502A
Búsqueda de reemplazo de BLF7G24L-100 MOSFET
- Selecciónⓘ de transistores por parámetros
BLF7G24L-100 datasheet
..1. Size:140K nxp
blf7g24l-100 7g24ls-100.pdf 
BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq
4.1. Size:142K nxp
blf7g24l-140 7g24ls-140.pdf
BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ID
8.1. Size:165K philips
blf7g27l-100 blf7g27ls-100.pdf
BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
8.2. Size:522K philips
blf7g20l-250p 7g20ls-250p.pdf
BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I
8.3. Size:422K philips
blf7g20ls-140p.pdf
BLF7G20LS-140P Power LDMOS transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp
8.4. Size:282K philips
blf7g20l-200 7g20ls-200.pdf
BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
8.5. Size:100K philips
blf7g20l-160p blf7g20ls-160p.pdf
BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
8.6. Size:289K philips
blf7g27l-75p blf7g27ls-75p.pdf
BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq
8.7. Size:210K philips
blf7g20l-90p blf7g20ls-90p.pdf
BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq
8.8. Size:199K philips
blf7g22l-200 blf7g22ls-200.pdf
BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
8.9. Size:304K philips
blf7g27l-150p 7g27ls-150p.pdf
BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation
8.11. Size:693K nxp
blf7g22l-100p blf7g22ls-100p.pdf
BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V
8.12. Size:194K nxp
blf7g21l-160p 7g21ls-160p.pdf
BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 3 10 February 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source
8.13. Size:171K nxp
blf7g27l-140 7g27ls-140.pdf
BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq
8.14. Size:972K nxp
blf7g27l-90p blf7g27ls-90p.pdf
BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
8.15. Size:300K nxp
blf7g27l-200pb.pdf
BLF7G27L-200PB Power LDMOS transistor Rev. 2 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV)
8.16. Size:168K nxp
blf7g22l-130 7g22ls-130.pdf
BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I
8.17. Size:978K nxp
blf7g22l-250p 22ls-250p.pdf
BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I
8.18. Size:1126K nxp
blf7g22l-160 7g22ls-160.pdf
BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation
Otros transistores... BLF7G22L-160
, BLF7G22L-200
, BLF7G22L-250P
, BLF7G22LS-100P
, BLF7G22LS-130
, BLF7G22LS-160
, BLF7G22LS-200
, BLF7G22LS-250P
, 8N60
, BLF7G24L-140
, BLF7G24LS-100
, BLF7G24LS-140
, BLF7G27L-100
, BLF7G27L-135
, BLF7G27L-140
, BLF7G27L-150P
, BLF7G27L-200PB
.
History: SMG2340N
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