BLF7G24L-100 - описание и поиск аналогов

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ID

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

BLF7G20LS-140P Power LDMOS transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V

BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 3 10 February 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source

BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

BLF7G27L-200PB Power LDMOS transistor Rev. 2 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV)

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation