BLF7G27L-135 Todos los transistores

 

BLF7G27L-135 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF7G27L-135
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SOT502A

 Búsqueda de reemplazo de MOSFET BLF7G27L-135

 

BLF7G27L-135 Datasheet (PDF)

 ..1. Size:273K  nxp
blf7g27l-135.pdf

BLF7G27L-135 BLF7G27L-135

BLF7G27L-135Power LDMOS transistorRev. 2 26 March 2012 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

 4.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdf

BLF7G27L-135 BLF7G27L-135

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.2. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdf

BLF7G27L-135 BLF7G27L-135

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

 4.3. Size:171K  nxp
blf7g27l-140 7g27ls-140.pdf

BLF7G27L-135 BLF7G27L-135

BLF7G27L-140; BLF7G27LS-140Power LDMOS transistorRev. 3 22 July 2011 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

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