Справочник MOSFET. BLF7G27L-135

 

BLF7G27L-135 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF7G27L-135
   Тип транзистора: LDMOS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: SOT502A
 

 Аналог (замена) для BLF7G27L-135

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLF7G27L-135 Datasheet (PDF)

 ..1. Size:273K  nxp
blf7g27l-135.pdfpdf_icon

BLF7G27L-135

BLF7G27L-135Power LDMOS transistorRev. 2 26 March 2012 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

 4.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdfpdf_icon

BLF7G27L-135

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.2. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdfpdf_icon

BLF7G27L-135

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

 4.3. Size:171K  nxp
blf7g27l-140 7g27ls-140.pdfpdf_icon

BLF7G27L-135

BLF7G27L-140; BLF7G27LS-140Power LDMOS transistorRev. 3 22 July 2011 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

Другие MOSFET... BLF7G22LS-160 , BLF7G22LS-200 , BLF7G22LS-250P , BLF7G24L-100 , BLF7G24L-140 , BLF7G24LS-100 , BLF7G24LS-140 , BLF7G27L-100 , IRFZ48N , BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 , BLF7G27LS-150P .

History: NCEAP60T20D | UPA2825T1S | 2SK3879 | AP95T08GP | NCEP0160G | SVF6N60MJ | FQPF9N50T

 

 
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