BLF7G27LS-140 Todos los transistores

 

BLF7G27LS-140 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF7G27LS-140

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: SOT502B

 Búsqueda de reemplazo de BLF7G27LS-140 MOSFET

- Selecciónⓘ de transistores por parámetros

 

BLF7G27LS-140 datasheet

 3.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdf pdf_icon

BLF7G27LS-140

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

 4.1. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdf pdf_icon

BLF7G27LS-140

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

 4.2. Size:972K  nxp
blf7g27l-90p blf7g27ls-90p.pdf pdf_icon

BLF7G27LS-140

BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

Otros transistores... BLF7G27L-100 , BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , IRF9640 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 .

History: 2SK60

 

 

 


History: 2SK60

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

irfb4110 | tip36c | bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193

 

 

↑ Back to Top
.