BLF7G27LS-140 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF7G27LS-140
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: SOT502B
Búsqueda de reemplazo de BLF7G27LS-140 MOSFET
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BLF7G27LS-140 datasheet
blf7g27l-100 blf7g27ls-100.pdf
BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
blf7g27l-75p blf7g27ls-75p.pdf
BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq
blf7g27l-90p blf7g27ls-90p.pdf
BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f
Otros transistores... BLF7G27L-100 , BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , IRF9640 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 .
History: 2SK60
History: 2SK60
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