BLF7G27LS-140
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF7G27LS-140
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Id|ⓘ - Maximum Drain Current: 28
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
SOT502B
BLF7G27LS-140
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF7G27LS-140
Datasheet (PDF)
3.1. Size:165K philips
blf7g27l-100 blf7g27ls-100.pdf
BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
4.1. Size:289K philips
blf7g27l-75p blf7g27ls-75p.pdf
BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq
4.2. Size:972K nxp
blf7g27l-90p blf7g27ls-90p.pdf
BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
Datasheet: WPB4002
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