BLF7G27LS-200PB MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLF7G27LS-200PB datasheet

4.1. Size:165K philips
blf7g27l-100 blf7g27ls-100.pdf pdf_icon

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

4.2. Size:289K philips
blf7g27l-75p blf7g27ls-75p.pdf pdf_icon

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

4.3. Size:972K nxp
blf7g27l-90p blf7g27ls-90p.pdf pdf_icon

BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

Otros transistores... BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 , BLF7G27LS-150P , AON7403 , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 , BLF879P , BLF881 .