BLF7G27LS-200PB MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF7G27LS-200PB
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id|ⓘ - Maximum Drain Current: 28 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT1110B
BLF7G27LS-200PB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF7G27LS-200PB Datasheet (PDF)
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