BLF7G27LS-200PB Datasheet and Replacement
Type Designator: BLF7G27LS-200PB
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id|ⓘ - Maximum Drain Current: 28 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT1110B
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BLF7G27LS-200PB Datasheet (PDF)
blf7g27l-100 blf7g27ls-100.pdf

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
blf7g27l-75p blf7g27ls-75p.pdf

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq
blf7g27l-90p blf7g27ls-90p.pdf

BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFI7536G | FDMS9620S | WMM11N80M3
Keywords - BLF7G27LS-200PB MOSFET datasheet
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History: IRFI7536G | FDMS9620S | WMM11N80M3



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