BLF861A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF861A
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 32 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Encapsulados: SOT540A
Búsqueda de reemplazo de BLF861A MOSFET
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BLF861A datasheet
blf861a n 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A FEATURES PINNING - SOT540A High power gain PIN DESCRIPTION Easy power control 1drain 1 Excellent ruggedness 2drain 2 Designed to withstand abrupt load mismatch erro
blf861a.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Product specification 2001 Feb 09 Supersedes data of 2000 Aug 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A FEATURES PINNING - SOT540A High power gain PIN DESCRIPTION Easy power control 1 drain 1 Excellent ruggedness 2 drain 2 Designed to withstand a
blf861.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Product specification 2000 May 23 Supersedes data of 2000 Feb 18 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT540A High power gain PIN DESCRIPTION Easy power control 1 drain 1 Excellent ruggedness 2 drain 2 Source on underside elimi
Otros transistores... BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , RU7088R , BLF871 , BLF871S , BLF878 , BLF879P , BLF881 , BLF881S , BLF884P , BLF884PS .
History: BLL6H0514LS-130
History: BLL6H0514LS-130
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