BLF871 Todos los transistores

 

BLF871 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF871
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: SOT467C
     - Selección de transistores por parámetros

 

BLF871 Datasheet (PDF)

 ..1. Size:134K  philips
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BLF871

BLF871UHF power LDMOS transistorRev. 01 18 December 2008 Objective data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 100 W broadband from HF to 1 GHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransm

 ..2. Size:587K  philips
blf871 blf871s.pdf pdf_icon

BLF871

BLF871; BLF871SUHF power LDMOS transistorRev. 04 19 November 2009 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita

 9.1. Size:152K  philips
blf872 1.pdf pdf_icon

BLF871

BLF872UHF power LDMOS transistorRev. 01 20 February 2006 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 250 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes

 9.2. Size:148K  nxp
blf878.pdf pdf_icon

BLF871

BLF878UHF power LDMOS transistorRev. 02 15 June 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 300 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes it

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTQ44N50P | ET6309 | BUK9635-100A | AP2312GN | IRF8852 | 2N7002PW | IRLML6402

 

 
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