Справочник MOSFET. BLF871

 

BLF871 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF871
   Тип транзистора: LDMOS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
   Тип корпуса: SOT467C
 

 Аналог (замена) для BLF871

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLF871 Datasheet (PDF)

 ..1. Size:134K  philips
blf871.pdfpdf_icon

BLF871

BLF871UHF power LDMOS transistorRev. 01 18 December 2008 Objective data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 100 W broadband from HF to 1 GHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransm

 ..2. Size:587K  philips
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BLF871

BLF871; BLF871SUHF power LDMOS transistorRev. 04 19 November 2009 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita

 9.1. Size:152K  philips
blf872 1.pdfpdf_icon

BLF871

BLF872UHF power LDMOS transistorRev. 01 20 February 2006 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 250 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes

 9.2. Size:148K  nxp
blf878.pdfpdf_icon

BLF871

BLF878UHF power LDMOS transistorRev. 02 15 June 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 300 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes it

Другие MOSFET... BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , 2N7002 , BLF871S , BLF878 , BLF879P , BLF881 , BLF881S , BLF884P , BLF884PS , BLF888 .

History: IXTP170N075T2 | SVFP4N60CAMJ | AP9562GP-HF | APM4532

 

 
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