BLF888BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF888BS
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 650 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: SOT539B
- Selección de transistores por parámetros
BLF888BS Datasheet (PDF)
blf888b blf888bs.pdf

BLF888B; BLF888BSUHF power LDMOS transistorRev. 2 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performance a
blf888.pdf

BLF888UHF power LDMOS transistorRev. 5 21 January 2011 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent
blf888a blf888as.pdf

BLF888A; BLF888ASUHF power LDMOS transistorRev. 5 4 November 2013 Product data sheet1. Product profile1.1 General descriptionA 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performanc
blf881 blf881s.pdf

BLF881; BLF881SUHF power LDMOS transistorRev. 3 7 December 2010 Product data sheet1. Product profile1.1 General descriptionA 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmit
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SVS65R380DD4TR | FDMQ8203 | AOB418 | 2SJ665 | WVM13N50 | SL3N06
History: SVS65R380DD4TR | FDMQ8203 | AOB418 | 2SJ665 | WVM13N50 | SL3N06



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