BLF888BS - описание и поиск аналогов

 

Аналоги BLF888BS. Основные параметры


   Наименование производителя: BLF888BS
   Тип транзистора: LDMOS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 650 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: SOT539B
 

 Аналог (замена) для BLF888BS

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLF888BS даташит

 ..1. Size:859K  nxp
blf888b blf888bs.pdfpdf_icon

BLF888BS

BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance a

 8.1. Size:164K  philips
blf888.pdfpdf_icon

BLF888BS

BLF888 UHF power LDMOS transistor Rev. 5 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent

 8.2. Size:519K  nxp
blf888a blf888as.pdfpdf_icon

BLF888BS

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performanc

 9.1. Size:193K  philips
blf881 blf881s.pdfpdf_icon

BLF888BS

BLF881; BLF881S UHF power LDMOS transistor Rev. 3 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmit

Другие MOSFET... BLF881 , BLF881S , BLF884P , BLF884PS , BLF888 , BLF888A , BLF888AS , BLF888B , IRF540N , BLF8G10L-160 , BLF8G10LS-160 , BLL1214-250 , BLL1214-250R , BLL1214-35 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 .

 

 

 


 
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