BLL1214-250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLL1214-250
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 36 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SOT502A

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BLL1214-250 Datasheet (PDF)

..1. Size:79K philips
bll1214-250.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLL1214-250L-band radar LDMOS transistorProduct specification 2003 Aug 29Supersedes data of 2002 Aug 06Philips Semiconductors Product specificationL-band radar LDMOS transistor BLL1214-250FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate

0.1. Size:133K philips
bll1214-250r.pdf

BLL1214-250RLDMOS L-band radar power transistorRev. 01 4 February 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.Table 1. Test informationTypical RF performance at Th =25C; tp = 1 ms

6.1. Size:64K philips
bll1214-35.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLL1214-35L-band radar LDMOS drivertransistorProduct specification 2002 Sep 27Philips Semiconductors Product specificationL-band radar LDMOS driver transistor BLL1214-35FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base eliminate

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