BLL1214-250 Datasheet and Replacement. Cross Reference Search

BLL1214-250 Datasheet (PDF)

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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLL1214-250L-band radar LDMOS transistorProduct specification 2003 Aug 29Supersedes data of 2002 Aug 06Philips Semiconductors Product specificationL-band radar LDMOS transistor BLL1214-250FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate

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BLL1214-250RLDMOS L-band radar power transistorRev. 01 4 February 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.Table 1. Test informationTypical RF performance at Th =25C; tp = 1 ms

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DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLL1214-35L-band radar LDMOS drivertransistorProduct specification 2002 Sep 27Philips Semiconductors Product specificationL-band radar LDMOS driver transistor BLL1214-35FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base eliminate

Datasheet: BLF884PS , BLF888 , BLF888A , BLF888AS , BLF888B , BLF888BS , BLF8G10L-160 , BLF8G10LS-160 , IRF640 , BLL1214-250R , BLL1214-35 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 .