BLL6H0514-25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLL6H0514-25
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.75 Ohm
Paquete / Cubierta: SOT467C
Búsqueda de reemplazo de BLL6H0514-25 MOSFET
BLL6H0514-25 Datasheet (PDF)
bll6h0514-25.pdf

BLL6H0514-25LDMOS driver transistorRev. 04 30 March 2010 Product data sheet1. Product profile1.1 General description25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp VDS PL Gp RLin D Pdroop(pul
bll6h0514l-130 0514ls-130.pdf

BLL6H0514L-130; BLL6H0514LS-130LDMOS driver transistorRev. 2 13 September 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp
bll6h1214l-250 1214ls-250.pdf

BLL6H1214L-250; BLL6H1214LS-250LDMOS L-band radar power transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product
bll6h1214-500.pdf

BLL6H1214-500LDMOS L-band radar power transistorRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.Mod
Otros transistores... BLF888AS , BLF888B , BLF888BS , BLF8G10L-160 , BLF8G10LS-160 , BLL1214-250 , BLL1214-250R , BLL1214-35 , IRF1404 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 , BLM6G10-30 , BLM6G10-30G , BLM6G22-30 .
History: 2SK2777 | SM9998DSQG | 2SK4019
History: 2SK2777 | SM9998DSQG | 2SK4019



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