Справочник MOSFET. BLL6H0514-25

 

BLL6H0514-25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLL6H0514-25
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.75 Ohm
   Тип корпуса: SOT467C

 Аналог (замена) для BLL6H0514-25

 

 

BLL6H0514-25 Datasheet (PDF)

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 bll6h0514-25.pdf

BLL6H0514-25 BLL6H0514-25

BLL6H0514-25LDMOS driver transistorRev. 04 30 March 2010 Product data sheet1. Product profile1.1 General description25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp VDS PL Gp RLin D Pdroop(pul

 5.1. Size:122K  philips
 bll6h0514l-130 0514ls-130.pdf

BLL6H0514-25 BLL6H0514-25

BLL6H0514L-130; BLL6H0514LS-130LDMOS driver transistorRev. 2 13 September 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp

 9.1. Size:281K  philips
 bll6h1214l-250 1214ls-250.pdf

BLL6H0514-25 BLL6H0514-25

BLL6H1214L-250; BLL6H1214LS-250LDMOS L-band radar power transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product

 9.2. Size:191K  philips
 bll6h1214-500.pdf

BLL6H0514-25 BLL6H0514-25

BLL6H1214-500LDMOS L-band radar power transistorRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.Mod

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