BLL6H1214LS-250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLL6H1214LS-250
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.169 Ohm
Paquete / Cubierta: SOT502B

Búsqueda de reemplazo de MOSFET BLL6H1214LS-250

BLL6H1214LS-250 Datasheet (PDF)

4.1. Size:281K philips
bll6h1214l-250 1214ls-250.pdf

BLL6H1214L-250; BLL6H1214LS-250LDMOS L-band radar power transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product

5.1. Size:191K philips
bll6h1214-500.pdf

BLL6H1214-500LDMOS L-band radar power transistorRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.Mod

9.1. Size:120K philips
bll6h0514-25.pdf

BLL6H0514-25LDMOS driver transistorRev. 04 30 March 2010 Product data sheet1. Product profile1.1 General description25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp VDS PL Gp RLin D Pdroop(pul

9.2. Size:122K philips
bll6h0514l-130 0514ls-130.pdf

BLL6H0514L-130; BLL6H0514LS-130LDMOS driver transistorRev. 2 13 September 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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