BLL6H1214LS-250 - параметры транзистора MOSFET, его аналоги, datasheet

BLL6H1214LS-250 Datasheet (PDF)

4.1. Size:281K philips
bll6h1214l-250 1214ls-250.pdf pdf_icon

BLL6H1214L-250; BLL6H1214LS-250LDMOS L-band radar power transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product

5.1. Size:191K philips
bll6h1214-500.pdf pdf_icon

BLL6H1214-500LDMOS L-band radar power transistorRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.Mod

9.1. Size:120K philips
bll6h0514-25.pdf pdf_icon

BLL6H0514-25LDMOS driver transistorRev. 04 30 March 2010 Product data sheet1. Product profile1.1 General description25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp VDS PL Gp RLin D Pdroop(pul

9.2. Size:122K philips
bll6h0514l-130 0514ls-130.pdf pdf_icon

BLL6H0514L-130; BLL6H0514LS-130LDMOS driver transistorRev. 2 13 September 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp

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