2SJ559 Todos los transistores

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ559 is a switching device which can be driven directly 0.3 0.05 0.1+0.1 0.05 by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital

2SJ555 Silicon P Channel MOS FET REJ03G0902-0300 (Previous ADE-208-634A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

2SJ550(L), 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ554 Silicon P Channel MOS FET REJ03G0901-0400 (Previous ADE-208-628B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ553(L), 2SJ553(S) Silicon P Channel MOS FET REJ03G0900-0400 (Previous ADE-208-650B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET REJ03G0898-0400 (Previous ADE-208-647B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ557 is a switching device which can be driven directly +0.1 0.4 0.05 by a 4 V power source. 0.16+0.1 0.06 The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such