2SJ559 Specs and Replacement
Type Designator: 2SJ559
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 330 nS
Cossⓘ -
Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
Package: SC75
- MOSFET ⓘ Cross-Reference Search
2SJ559 datasheet
..1. Size:50K nec
2sj559.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ559 is a switching device which can be driven directly 0.3 0.05 0.1+0.1 0.05 by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital ... See More ⇒
9.1. Size:90K renesas
2sj555.pdf
2SJ555 Silicon P Channel MOS FET REJ03G0902-0300 (Previous ADE-208-634A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange... See More ⇒
9.2. Size:95K renesas
2sj550.pdf
2SJ550(L), 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack... See More ⇒
9.3. Size:103K renesas
rej03g0902 2sj555ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.4. Size:103K renesas
rej03g0901 2sj554ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.5. Size:90K renesas
2sj554.pdf
2SJ554 Silicon P Channel MOS FET REJ03G0901-0400 (Previous ADE-208-628B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange... See More ⇒
9.6. Size:109K renesas
rej03g0897 2sj550lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.7. Size:109K renesas
rej03g0899 2sj552lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.8. Size:96K renesas
2sj553.pdf
2SJ553(L), 2SJ553(S) Silicon P Channel MOS FET REJ03G0900-0400 (Previous ADE-208-650B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack... See More ⇒
9.9. Size:109K renesas
rej03g0900 2sj553lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.10. Size:96K renesas
2sj552.pdf
2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack... See More ⇒
9.11. Size:276K renesas
2sj557a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.12. Size:108K renesas
rej03g0898 2sj551lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.13. Size:95K renesas
2sj551.pdf
2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET REJ03G0898-0400 (Previous ADE-208-647B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack... See More ⇒
9.14. Size:60K nec
2sj557.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ557 is a switching device which can be driven directly +0.1 0.4 0.05 by a 4 V power source. 0.16+0.1 0.06 The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ... See More ⇒
Detailed specifications: BLM6G22-30, BLM6G22-30G, 2SK1745, 2SK60, 2SJ238, BLS2933-100, BLS6G2731-120, BLS6G2731-6G, IRF630, BLS6G2731S-120, BLS6G2731S-130, BLS6G2735L-30, BLS6G2735LS-30, BLS6G2933P-200, BLS6G2933S-130, BLS6G3135-120, BLS6G3135-20
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
