BLS6G2731S-120 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLS6G2731S-120 datasheet

2.1. Size:134K nxp
bls6g2731s-130.pdf pdf_icon

BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod

5.1. Size:70K philips
bls6g2731-6g.pdf pdf_icon

BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of

5.2. Size:74K nxp
bls6g2731-120 6g2731s-120.pdf pdf_icon

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production te

Otros transistores... BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , BLS6G2731-6G , 2SJ559 , IRF9540 , BLS6G2731S-130 , BLS6G2735L-30 , BLS6G2735LS-30 , BLS6G2933P-200 , BLS6G2933S-130 , BLS6G3135-120 , BLS6G3135-20 , BLS6G3135S-120 .