BLS6G2731S-120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLS6G2731S-120
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 32 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
Paquete / Cubierta: SOT502B
Búsqueda de reemplazo de BLS6G2731S-120 MOSFET
BLS6G2731S-120 Datasheet (PDF)
bls6g2731s-130.pdf

BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod
bls6g2731-6g.pdf

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of
bls6g2731-120 6g2731s-120.pdf

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te
Otros transistores... BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , BLS6G2731-6G , 2SJ559 , K3569 , BLS6G2731S-130 , BLS6G2735L-30 , BLS6G2735LS-30 , BLS6G2933P-200 , BLS6G2933S-130 , BLS6G3135-120 , BLS6G3135-20 , BLS6G3135S-120 .
History: STL22N65M5
History: STL22N65M5



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