BLS6G2731S-120 LDMOS: N-Ch, 32V, 33A. Full datasheet with pinout, specifications and replacement transistor list

BLS6G2731S-120 Datasheet (PDF)

2.1. Size:134K nxp
bls6g2731s-130.pdf pdf_icon

BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

5.1. Size:70K philips
bls6g2731-6g.pdf pdf_icon

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

5.2. Size:74K nxp
bls6g2731-120 6g2731s-120.pdf pdf_icon

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

Datasheet: BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , BLS6G2731-6G , 2SJ559 , IRF9540 , BLS6G2731S-130 , BLS6G2735L-30 , BLS6G2735LS-30 , BLS6G2933P-200 , BLS6G2933S-130 , BLS6G3135-120 , BLS6G3135-20 , BLS6G3135S-120 .