BLS6G2731S-120
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS6G2731S-120
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32
V
|Id|ⓘ - Maximum Drain Current: 33
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135
Ohm
Package:
SOT502B
BLS6G2731S-120
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS6G2731S-120
Datasheet (PDF)
2.1. Size:134K nxp
bls6g2731s-130.pdf 
BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod
5.1. Size:70K philips
bls6g2731-6g.pdf
BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of
5.2. Size:74K nxp
bls6g2731-120 6g2731s-120.pdf
BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te
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