BLS7G2325L-105 Todos los transistores

 ..1. Size:292K  nxp
 bls7g2325l-105.pdf

BLS7G2325L-105 Power LDMOS transistor Rev. 2 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp

 8.1. Size:166K  nxp
 bls7g2729l-350p ls-350p.pdf

BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB

 8.2. Size:121K  nxp
 bls7g2933s-150.pdf

BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod

 9.1. Size:182K  nxp
 bls7g3135l-350p 7g3135ls-350p.pdf

BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 29 October 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB produc