All MOSFET. BLS7G2325L-105 Datasheet

 

BLS7G2325L-105 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLS7G2325L-105
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT502A

 BLS7G2325L-105 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLS7G2325L-105 Datasheet (PDF)

 ..1. Size:292K  nxp
bls7g2325l-105.pdf

BLS7G2325L-105
BLS7G2325L-105

BLS7G2325L-105Power LDMOS transistorRev. 2 19 July 2011 Product data sheet1. Product profile1.1 General description105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

 8.1. Size:166K  nxp
bls7g2729l-350p ls-350p.pdf

BLS7G2325L-105
BLS7G2325L-105

BLS7G2729L-350P; BLS7G2729LS-350PLDMOS S-band radar power transistorRev. 5 16 May 2014 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB

 8.2. Size:121K  nxp
bls7g2933s-150.pdf

BLS7G2325L-105
BLS7G2325L-105

BLS7G2933S-150LDMOS S-band radar power transistorRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

 9.1. Size:182K  nxp
bls7g3135l-350p 7g3135ls-350p.pdf

BLS7G2325L-105
BLS7G2325L-105

BLS7G3135L-350P; BLS7G3135LS-350PLDMOS S-band radar power transistorRev. 3 29 October 2013 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB produc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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