BSH103 Todos los transistores

 

BSH103 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSH103

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO236AB

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BSH103 datasheet

 ..1. Size:78K  philips
bsh103 4.pdf pdf_icon

BSH103

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor 1998 Feb 11 Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode BSH103 MOS transistor FEATURES PINNING - SOT23 Very low threshold PIN SYMBOL DESCRIPTIO

 ..2. Size:193K  nxp
bsh103.pdf pdf_icon

BSH103

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:110K  philips
bsh105 3.pdf pdf_icon

BSH103

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancem

 9.2. Size:116K  philips
bsh107 3.pdf pdf_icon

BSH103

Philips Semiconductors Product specification N-channel enhancement mode BSH107 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.75 A Subminiature surface mount package RDS(ON) 90 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT457 N-channel, enhancem

Otros transistores... BLS6G3135S-20 , BLS7G2325L-105 , BLS7G2729L-350P , BLS7G2729LS-350P , BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , 12N60 , BSH105 , BSH108 , BSH111 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 .

History: BSH111

 

 

 


History: BSH111

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