DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH103N-channel enhancement modeMOS transistor1998 Feb 11Product specificationSupersedes data of 1998 Jan 30File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH103MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancem

Philips Semiconductors Product specification N-channel enhancement mode BSH107 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.75 A Subminiature surface mountpackage RDS(ON) 90 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT457N-channel, enhancem

Philips Semiconductors Product specification N-channel enhancement mode BSH106 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT363N-channel, enhance

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH102N-channel enhancement modeMOS transistor1997 Dec 08Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH102MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSH104N-channel enhancement modeMOS transistor1997 Nov 26Objective specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationN-channel enhancement modeBSH104MOS transistorFEATURES PINNING High-speed switchingPIN SYMBOL DESCRIPTION No secondary breakdown1 g ga

BSH108N-channel enhancement mode field-effect transistorRev. 02 25 October 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH101N-channel enhancement modeMOS transistor2000 Jul 19Product specicationSupersedes data of 1997 Nov 28File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH101MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Product specificationBSH108N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fa

Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancement mode, PIN DESCRIPTI

SMD Type MOSFETN-Channel MOSFETBSH105 (KSH105)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V)1 2 RDS(ON) 200m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V)1.9+0.1-0.1 RDS(ON) 300m (VGS = 1.8V)D1. Gate2. Source3. DrainGS Absolute Maximum R