BSH103 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor 1998 Feb 11 Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode BSH103 MOS transistor FEATURES PINNING - SOT23 Very low threshold PIN SYMBOL DESCRIPTIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancem

Philips Semiconductors Product specification N-channel enhancement mode BSH107 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.75 A Subminiature surface mount package RDS(ON) 90 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT457 N-channel, enhancem

Philips Semiconductors Product specification N-channel enhancement mode BSH106 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT363 N-channel, enhance

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor 1997 Dec 08 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor FEATURES PINNING - SOT23 Very low threshold PIN SYMBOL DESCRIPTIO

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSH104 N-channel enhancement mode MOS transistor 1997 Nov 26 Objective specification File under Discrete Semiconductors, SC13b Philips Semiconductors Objective specification N-channel enhancement mode BSH104 MOS transistor FEATURES PINNING High-speed switching PIN SYMBOL DESCRIPTION No secondary breakdown 1 g ga

BSH108 N-channel enhancement mode field-effect transistor Rev. 02 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH108 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor 2000 Jul 19 Product speci cation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor FEATURES PINNING - SOT23 Very low threshold PIN SYMBOL DESCRIPTIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Product specification BSH108 N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH108 in SOT23. 2. Features TrenchMOS technology Very fa

Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancement mode, PIN DESCRIPTI

SMD Type MOSFET N-Channel MOSFET BSH105 (KSH105) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V) 1 2 RDS(ON) 200m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V) 1.9+0.1 -0.1 RDS(ON) 300m (VGS = 1.8V) D 1. Gate 2. Source 3. Drain G S Absolute Maximum R