BSH108 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSH108
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO236AB

Búsqueda de reemplazo de MOSFET BSH108

BSH108 Datasheet (PDF)

..1. Size:414K nxp
bsh108.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

..2. Size:201K tysemi
bsh108.pdf

Product specificationBSH108N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fa

0.1. Size:318K philips
bsh108-02.pdf

BSH108N-channel enhancement mode field-effect transistorRev. 02 25 October 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p

9.1. Size:110K philips
bsh105 3.pdf

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancem

9.2. Size:116K philips
bsh107 3.pdf

Philips Semiconductors Product specification N-channel enhancement mode BSH107 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.75 A Subminiature surface mountpackage RDS(ON) 90 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT457N-channel, enhancem

9.3. Size:110K philips
bsh106 3.pdf

Philips Semiconductors Product specification N-channel enhancement mode BSH106 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT363N-channel, enhance

9.4. Size:78K philips
bsh102 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH102N-channel enhancement modeMOS transistor1997 Dec 08Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH102MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

9.5. Size:51K philips
bsh104 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSH104N-channel enhancement modeMOS transistor1997 Nov 26Objective specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationN-channel enhancement modeBSH104MOS transistorFEATURES PINNING High-speed switchingPIN SYMBOL DESCRIPTION No secondary breakdown1 g ga

9.6. Size:78K philips
bsh103 4.pdf

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH103N-channel enhancement modeMOS transistor1998 Feb 11Product specificationSupersedes data of 1998 Jan 30File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH103MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

9.7. Size:643K philips
bsh101 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH101N-channel enhancement modeMOS transistor2000 Jul 19Product specicationSupersedes data of 1997 Nov 28File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH101MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

9.8. Size:193K nxp
bsh103.pdf

9.9. Size:225K nxp
bsh105.pdf

9.10. Size:35K tysemi
bsh105.pdf

Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancement mode, PIN DESCRIPTI

9.11. Size:1517K kexin
bsh105.pdf

SMD Type MOSFETN-Channel MOSFETBSH105 (KSH105)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V)1 2 RDS(ON) 200m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V)1.9+0.1-0.1 RDS(ON) 300m (VGS = 1.8V)D1. Gate2. Source3. DrainGS Absolute Maximum R

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