Справочник MOSFET. BSH108

 

BSH108 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BSH108
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO236AB
     - подбор MOSFET транзистора по параметрам

 

BSH108 Datasheet (PDF)

 ..1. Size:414K  nxp
bsh108.pdfpdf_icon

BSH108

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..2. Size:201K  tysemi
bsh108.pdfpdf_icon

BSH108

Product specificationBSH108N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fa

 0.1. Size:318K  philips
bsh108-02.pdfpdf_icon

BSH108

BSH108N-channel enhancement mode field-effect transistorRev. 02 25 October 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p

 9.1. Size:110K  philips
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BSH108

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancem

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: ME6600D-G | MTW32N20EG | NCE0250D | IRFU9214 | IPI80CN10NG | WSF20P03

 

 
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