BSH108 - описание и поиск аналогов

 

BSH108. Аналоги и основные параметры

Наименование производителя: BSH108

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm

Тип корпуса: TO236AB

Аналог (замена) для BSH108

- подборⓘ MOSFET транзистора по параметрам

 

BSH108 даташит

 ..1. Size:414K  nxp
bsh108.pdfpdf_icon

BSH108

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..2. Size:201K  tysemi
bsh108.pdfpdf_icon

BSH108

Product specification BSH108 N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH108 in SOT23. 2. Features TrenchMOS technology Very fa

 0.1. Size:318K  philips
bsh108-02.pdfpdf_icon

BSH108

BSH108 N-channel enhancement mode field-effect transistor Rev. 02 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH108 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p

 9.1. Size:110K  philips
bsh105 3.pdfpdf_icon

BSH108

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mount package RDS(ON) 250 m (VGS = 2.5 V) g VGS(TO) 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancem

Другие MOSFET... BLS7G2729L-350P , BLS7G2729LS-350P , BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , IRF1010E , BSH111 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 .

History: BSH121 | BSH114

 

 

 

 

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